elektronische bauelemente KS05E4 integrated esd protection array 08-apr-2014 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. b l f h c j d g k a e = date code rohs compliant product a suffix of -c specifies halogen and lead-free description the KS05E4 is designed to protect i/os being sensit ive concerning capacitive load, such as usb2.0,ethernet, dvi etc. from destruction byelectrostatic discharges (esd). therefore, the KS05E4 incorporates four pairs of ul tra-low capacity rail-to-rail diodes plus an additional zener diode to provide protection to downstream signal and supply components from ele ctrostatic discharge (esd) voltages as high as due to the rail-to-rail diodes being connected to t he zener diode, the protection is working independent from the avai lability of a supply voltage. the KS05E4 is fabricated using thin film-on-silicon technology and integrates 4 ultra-low capacity rail-to-rail es d protection diodes in a miniature sot-26 package applications digital cameras portable instrumentation notebooks, desktops, and serves personal digital assistants (pdas) cell phone handsets and accessories features low clamping voltage low leakage current small package sot-26 package esd iec 6100-4-2 level 4, 8 kv contact discharge compliant protection marking package information package mpq leader size sot-26 3k 7 inch sot-26 0 5 e 4 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1 .30 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 top view
elektronische bauelemente KS05E4 integrated esd protection array 08-apr-2014 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. absolute maximum ratings (t a =25c unless otherwise specified) rating symbol value unit air 14 iec 61000-4-2 (esd) contact v esd 8 kv peak pulse current (tp=8/20us) v dd -gnd i pp 6 a peak pulse power (tp=8/20us) p pk 100 w operating temperature range t j -40~85 c storage temperature range t stg -55 ~ 125 c lead temperature t l 260 c . electrical characteristics (t a =25 c unless otherwise specified) parameter symbol condition min. typ. max. units dc input voltage range v i/o - - 5.5 v zener diode breakdown voltage, pin 5 to 2 v bri/o i=1ma 6 - 9 v forward voltage v f - 0.7 - v diode reverse leakage current, pins 1,3,4,6 to ground i ikg v rwm =3v - - 100 na pin capacitance to ground, pins 1,3,4,6 c i/o vdc=0v, f=1mhz pin 5=3v - 1.8 - pf zener diode capacitance to ground, pin 5 to 2 c zener vdc=0v, f=1mhz pin 5=3v - 36 - pf i pp =1a, tp=8/20us - - 8 v i pp =4a, tp=8/20us - - 8.5 v clamping voltage, v dd -gnd v c i pp =9a, tp=8/20us - - 12 v
elektronische bauelemente KS05E4 integrated esd protection array 08-apr-2014 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. applications information universal serial bus 2.0 protection the KS05E4 is optimized to protect e.g. two usb 2.0 ports of electro-static-discharge (esd). each device is capable of protection both usb data lines and the vbus supply. a typical application is shown in the schematic below.
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